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Atomic Layer Deposition

ALD deposition of Al2O3 or TiN

Equipment

BENEQ TFS 200

Specifications

Film Temperature [°C] nm/cycle Cycle time [s] Dep rate [nm/min]
Al2O3 200 0.11 1.5 4.4
TiN 350 0.024 2.65 0.55

Typical time to process one wafer is 2 hours + deposition time

Restrictions & Requirements

  • Substrate size (max.): 200 mm
  • Substrate size (min.): pieces
  • Other substrate restrictions: Material on the wafer/piece needs to tolerate the deposition temperature
  • Batch processing: No
  • Carrier substrate allowed: No
  • Manual load/Carrier load: Manual loading

Contact

Per-Erik Hellström
pereh@kth.se
+46 8-790 43 25

Integrated Devices and Circuits
School of ICT
KTH