Myfab

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Coater and Developer Cluster

Completely automated lithography cluster system allowing batch processing of 6” & 8” Si -wafers. Includes DI rinse, Vacuum Primer for HMDS, resist coater module, developer module, 2 hotplates, 1 cool plate & centering station.

Equipment

Suss Gamma 4M Cluster System

Specifications

Coater Station
  • AZ ECI 3012 High Resolution photoresist and AZ 45XX Thick photoresist
  • Spin speed range 10-5000 rpm (cover open); 10-3000 rpm (cover closed)
  • Spin speed accuracy ± 1 rpm
  • Acceleration 10-5000 rpm/s (cover open); 10-4000 rpm (cover closed)
  • Lift pin mechanism
  • Programmable dispense arm
  • Backside Rinse & Frontside EBR
  • Nozzle clean
Developer Station
  • AZ 726 MIF Developer
  • Dispense arm for puddle development
  • DI Nozzle for rinsing substrates
  • Spin speed range 10-6000rpm
  • Acceleration 10-3000 rpm/s
  • Programmable dispense arm
  • Backside Rinse
Vacuum Primer for HMDS
  • Temperature Range 60-200 °C
  • Uniformity (up to 120 °C) ± 0.6 °C
  • Uniformity (above 120 °C ) ± 1.2 °C
Hotplate Cassette
  • Two 250 °C Hotplates
  • Temperature Range 60-250 °C
  • Uniformity (up to 120 °C) ± 0.5 °C
  • Uniformity (from 120 °C to 250 °C) ± 1.0 %
  • Programmable Proximity 0.2-15 mm, step 0.1 mm
  • Fixed Proximity 0.15 mm
Coolplate Cassette
  • Temperature Range 60-250 °C
  • Uniformity ± 0.2 °C
  • Programmable Proximity 0.2-15 mm, step 0.1 mm
  • Fixed Proximity 0.15 mm

Restrictions & Requirements

  • Substrate size (max.): 8” / 200 mm
  • Substrate size (min.): 6” / 150 mm
  • Other substrate restrictions: No thin wafers, No PDMS or other non-soluble photoresist.
  • Batch processing: Yes
  • Carrier substrate allowed: No
  • Manual load/Carrier load: Robot, Cassette to Cassette

Contact

Commercial discussion

Nils Nordell
nordell@kth.se
+46 8-790 43 88

Technical discussion

Aleksandar Radojcic
alerad@kth.se
+46 8-790 43 93