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Epitaxial deposition of III/V-based compounds

Epitaxial deposition of III/V-based compounds and quantum-confined structures

Equipment

Aixtron 200/4 MOVPE

Specifications

Horizontal reactor with gasfoil rotation.

  • (InGaAl)/(AsPSbN) compounds
  • Si, Te, Sn, Zn, C doping
  • Growth temperature up to 750 C

 

Restrictions & Requirements

  • Substrate size (max.): 2 inch (3 or 4 inch possible after reconfiguration)
  • Substrate size (min.): Small pieces possible
  • Other substrate restrictions:
  • Batch processing: No
  • Carrier substrate allowed (Y/N):
  • Manual load/Carrier load:

 

Contact

Commercial discussion

Nils Nordell
nordell@kth.se
+46 8-790 43 88

Technical discussion

Mattias Hammar
hammar@kth.se
+46 8-790 43 75