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Nitride deposition process

The process allows depositing nitride with a good uniformity. Recipe tuning is also possible.

Equipment

Applied Materials Precision 5000 Mark II – PECVD

Specifications

Film Deposition rate [nm/min] Uniformity
Si3N4 611 ±0,4%

Etch Rate in 5% HF is ∼20 nm/min (∼1x Thermal oxide)

Restrictions & Requirements

  • Substrate size (max.): 4in
  • Substrate size (min.): N/A, sample allowed but require carrier
  • Other substrate restrictions: N/A
  • Batch processing: Single wafer processing
  • Carrier substrate allowed: Yes
  • Manual load/Carrier load: Automatic loading/handling of 25 wafers

 

 

Contact

Per-Erik Hellström
pereh@kth.se
+46 8-790 43 25

Gabriel Roupillard
groupi@kth.se
+46 8-790 43 67

Integrated Devices and Circuits
School of ICT
KTH