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Oxidation and temperature anneal

Growing silicon dioxide films with O2, H2O or N2O
Possible to incorporate Cl in oxide film
Temperature anneal of silicon
T4: H2 anneal of metal systems

Equipment

T1 - Oxide 1150C (485)
T2 - Oxide 1250C (486)
T3 - Gate ox (487)
T4 - FGA (488)

Specifications

T1
  • Thermal oxidation of silicon (dry and wet), Diffusion
  • Temperature: 625 - 1150 °C
  • Gases: N2, O2, H2 (to make H2O), N2O and DCE (C2H2CI2)
T2
  •  
  • Thermal oxidation of silicon (dry and wet), Diffusion
  • Temperature: 625 - 1250 °C
  • Gases: N2, O2, H2 (to make H2O), N2O and DCE (C2H2CI2)
T3
  • Gate oxidation of silicon (dry), Diffusion
  • Temperature: 625 - 1150 °C
  • Gases: N2, O2 and DCE (C2H2CI2)
T4
  • Forming gas anneal (FGA),
  • Temperature: 300 - 450 °C
  • Gases: N2 and H2

Restrictions & Requirements

  • Substrate size (max.): 200 mm
  • Substrate size (min.): 4” and pieces
  • Other substrate restrictions:
    • Silicon (Si, SiC) materials allowed
    • T1, T2, T3: no metals, no polymers
    • T4: No gold, no polymers
  • Batch processing: Yes
  • Carrier substrate allowed: No
  • Manual load/Carrier load: Manual load

 

Contact

Commercial discussion

Nils Nordell
nordell@kth.se
+46 8-790 43 88

Technical discussion

Per Wehlin
pgiwe@kth.se
+46 8-790 43 89