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Oxide etching process

The process allows etching up to several microns of oxide with a good uniformity. Recipe tuning is also possible.

Equipment

Applied Materials Precision 5000 Mark II – dielectric etching

Specifications

Film Etch rate [nm/min] Uniformity (3σ)
SiO2 140 ±8

Endpoint detection with adjustable over etch available.

Restrictions & Requirements

  • Substrate size (max.): 4in
  • Substrate size (min.): N/A, sample allowed but require carrier
  • Other substrate restrictions: No metal layers in contact with plasma
  • Batch processing: Single wafer processing
  • Carrier substrate allowed: Yes
  • Manual load/Carrier load: Automatic loading/handling of 25 wafers

 

Contact

Per-Erik Hellström
pereh@kth.se
+46 8-790 43 25

Gabriel Roupillard
groupi@kth.se
+46 8-790 43 67

Integrated Devices and Circuits
School of ICT
KTH