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Dry etching

Dry Etching

Dry etching, i.e., etching under vacuum with reactive gases, is used to remove material and to create the wanted topography. Our precision dry etching tools feature state-of-the-art processes with end point detection. We have the appropriate processes for conventional structures in Si, and compound semiconductor materials, for deep Si structures, and for meals and dielectrics.
 

 NameManufacturerModel
DetailsALOESSTSICP AOE (DRIE)
DetailsICPSTSICP DRIE (Si, SiO2)
DetailsP5000Applied MaterialsPrecision 5000 Mark II (Dielectric, MxP, CVD)
DetailsEsaOxford Plasma SystemPlasmalab80Plus (Oxford RIE System) Chamber B
DetailsFabioOxford InstrumentICP380 Etch System
DetailsGallusOxford InstrumentICP380 Etch System (GaAs & InP)
DetailsTeplaTePla300 (Microwave Plasma Asher)
DetailsPamelaSTS 308PC (RF Plasma Asher)
DetailsPlasmatvätt PicoDiener PICO RFLow pressure plasma etcher
DetailsRIEPlasmalab System 100RIE of thin films (Si3N4 & SiO2)
DetailsCenturaApplied MaterialsCentura II (DPS & MxP)
DetailsArielOxford Plasma TechnologyPlasmalab80Plus (Oxford RIE System)
DetailsRIE ICP O2/AR AlbanovaOxfordPlasmalab 80+
DetailsCryo RIE AlbanovaOxfordPlasmalab 100
DetailsRIBEOxford Instruments Plasma TechnologyIonfab 300 plus